Infineon 工业自动化零部件 – 第 18 | PartnerPLC

首页 / Infineon

在下方筛选中找不到？按料号或关键词搜索全部 Infineon 产品：

Infineon IFCM20U65GD – CIPOS™ Mini 650 V, 20 A three-phase interleaved PFC intelligent power module

Infineon

CIPOS™ Mini 650 V, 20 A three-phase interleaved PFC intelligent power module

Infineon IFCM20T65GD – CIPOS™ Mini 650 V, 20 A two-phase interleaved PFC intelligent power module

Infineon

CIPOS™ Mini 650 V, 20 A two-phase interleaved PFC intelligent power module

Infineon TT160N16SOF – 34 mm Thyristor/Thyristor Module with 1600 V in solder bond technology

Infineon

34 mm Thyristor/Thyristor Module with 1600 V in solder bond technology

Infineon DD180N16S – 34 mm Rectifier Diode Module with 1600 V in solder bond technology

Infineon

34 mm Rectifier Diode Module with 1600 V in solder bond technology

Infineon FS200R12PT4P – 1200 V, 200 A sixpack IGBT module

Infineon

1200 V, 200 A sixpack IGBT module

Infineon FF300R12KT4P – 1200 V, 300 A half-bridge IGBT module

Infineon

1200 V, 300 A half-bridge IGBT module

Infineon FD200R12KE3P – 1200 V, 200 A chopper IGBT module

Infineon

1200 V, 200 A chopper IGBT module

Infineon FF1000R17IE4DP-B2 – 1700 V, 1000 A half-bridge IGBT module

Infineon

FF1000R17IE4DP-B2

1700 V, 1000 A half-bridge IGBT module

Infineon FF900R12IE4P – 1200 V, 900 A dual IGBT module

Infineon

1200 V, 900 A dual IGBT module

Infineon FF1400R12IP4P – 1200 V, 1400 A half-bridge IGBT module

Infineon

1200 V, 1400 A half-bridge IGBT module

Infineon FF650R17IE4P – 1700 V, 650 A half-bridge IGBT module

Infineon

1700 V, 650 A half-bridge IGBT module

Infineon FF650R17IE4DP-B2 – 1700 V, 650 A dual IGBT module

Infineon

FF650R17IE4DP-B2

1700 V, 650 A dual IGBT module

Infineon FF200R12KE4P – 1200 V, 200 A half-bridge IGBT module

Infineon

1200 V, 200 A half-bridge IGBT module

Infineon FF300R12KE4P – 1200 V, 300 A half-bridge IGBT module

Infineon

1200 V, 300 A half-bridge IGBT module

Infineon FF450R12KT4P – 1200 V, 450 A half-bridge IGBT module

Infineon

1200 V, 450 A half-bridge IGBT module

Infineon FF450R12KE4P – 1200 V, 450 A half-bridge IGBT module

Infineon

1200 V, 450 A half-bridge IGBT module

Infineon FF1000R17IE4P – 1700 V, 1000 A half-bridge IGBT module

Infineon

1700 V, 1000 A half-bridge IGBT module

Infineon FF1400R17IP4P – 1700 V, 1400 A half-bridge IGBT module

Infineon

1700 V, 1400 A half-bridge IGBT module

Infineon FF300R12KS4P – 1200 V, 300 A half-bridge IGBT module

Infineon

1200 V, 300 A half-bridge IGBT module

Infineon TT190N16SOF – 34 mm Thyristor/Thyristor Module with 1600 V in solder bond technology

Infineon

34 mm Thyristor/Thyristor Module with 1600 V in solder bond technology

Infineon TD190N16SOF – 34 mm Thyristor/Diode Module with 1600 V in solder bond technology

Infineon

34 mm Thyristor/Diode Module with 1600 V in solder bond technology

Infineon FF300R12KT3P-E – 1200 V, 300 A common emitter IGBT module

Infineon

1200 V, 300 A common emitter IGBT module

Infineon ND89N12K – 20 mm Single Rectifier Diode Module with 1200 V in pressure contact technology

Infineon

20 mm Single Rectifier Diode Module with 1200 V in pressure contact technology

Infineon DD89N14K – 20 mm Rectifier Diode Module with 1400 V in pressure contact technology

Infineon

20 mm Rectifier Diode Module with 1400 V in pressure contact technology