Infineon 零部件

34 mm Rectifier Diode Module with 2200 V in solder bond technology

1700 V, 1800 A half-bridge IGBT module

1200 V, 450 A sixpack IGBT module

50 mm Rectifier Diode Module with 2200 V in solder bond technology

650 V, 300 A 3-level IGBT module

1700 V, 3600 A single switch IGBT module

1700 V, 2400 A single switch IGBT module

1200 V, 2400 A single switch IGBT module

1700 V, 450 A sixpack IGBT module

60 mm Thyristor/Diode Module with 1600 V in pressure contact technology

1700 V, 1200 A single switch IGBT module

1200 V, 1200 A single switch IGBT module

60 mm Thyristor/Diode Module with 2200 V in pressure contact technology

1200 V, 1800 A half-bridge IGBT module

1700 V, 1200 A half-bridge IGBT module

1200 V, 1200 A half-bridge IGBT module

1700 V, 500 A half-bridge IGBT module

1700 V, 400 A common emitter IGBT module

1700 V, 400 A half-bridge IGBT module

1200 V, 600 A common emitter IGBT module

1200 V, 600 A half-bridge IGBT module

CIPOS™ Mini 650 V, 30 A two-phase interleaved PFC intelligent power module

34 mm Thyristor/Diode Module with 1600 V in solder bond technology

CIPOS™ Mini 650 V, 30 A three-phase interleaved PFC intelligent power module